Infineon (IKW30N60TFKSA1) IGBT, General Purpose, 60 A, 2.05 V, 187 W, 600 V

IGBT, General Purpose, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 Pins

Product Overview
The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency
Low conduction and switching losses

Applications
Power Management, Alternative Energy, Industrial

Product Information
Continuous Collector Current: 60A
Collector Emitter Saturation Voltage: 2.05V
Power Dissipation: 187W
Collector Emitter Voltage Max: 600V
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Transistor Mounting: Through Hole

What's in the box
1 x Single IGBT