Infineon (IRF1407PBF) Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm

Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole

Product Overview
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax

Applications
Motor Drive & Control, Automotive, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 130A
Drain Source Voltage Vds: 75V
Drain Source On State Resistance: 0.0078ohm
On Resistance Rds(on): 0.0078ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 330W
Transistor Case Style: TO-220AB
Power Dissipation: 330W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet