Infineon (IRFB7430PBF) Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole

Product Overview
Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.

Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
High-current rating and high-current carrying capability package
Product qualification according to JEDEC standard
Softer body-diode compared to previous silicon generation
Industry standard qualification level
High performance in low frequency applications
Increased power density
Standard pinout allows for drop in replacement

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 195A
Drain Source Voltage Vds: 40V
Drain Source On State Resistance: 0.001ohm
On Resistance Rds(on): 0.001ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 2.2V
Power Dissipation Pd: 375W
Transistor Case Style: TO-220AB
Power Dissipation: 375W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet