Onsemi (MJ11015G) Bipolar (BJT) Single Transistor, PNP, 120 V, 30 A
200 W, TO-3, Through Hole
Takealot · checked 5 days ago
- Average
- R 1 254.00
- Lowest seen
- R 1 254.00
- Highest seen
- R 1 254.00
- Last change
- R 0.00
- First indexed
- 22 Sep 2026
- Retailer
- Takealot
Description
Product Overview
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
Collector to emitter voltage (Vce) of -120V
Collector current (Ic) of -30A
Power dissipation of 200W
Operating junction temperature range from -55°C to 200°C
Collector emitter breakdown Voltage of -120V
Collector emitter saturation voltage of -3V at 20A collector current
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product Information
Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: 120V
DC Collector Current: 30A
Power Dissipation Pd: 200W
Transistor Case Style: TO-3
Transistor Mounting: Through Hole
No. of Pins: 2Pins
Transition Frequency ft: -
DC Current Gain hFE: 1000hFE
Operating Temperature Max: 200°C
Product Range: -
Automotive Qualification Standard: -
MSL: -
What's in the box
1 x Onsemi (MJ11015G) Bipolar (BJT) Single Transistor
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