TSV 3D RF Integration

Since 2008 HR-Si (High-Resistivity Silicon) technology has been used in 3D RF heterogenous integration. Devices using this technology are used in 5G and millimeter wave applications, as well as in other microelectronics. TSV (through silicon via) interposer technology is important in advanced package technology for 5G RF modules, transmitters and receivers and has a number of problems that the microelectronics industry needs to solve, including high frequency loss and issues with cooling. TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies and presents a systematic literature review.

TSV 3D RF Integration: High Resistivity Si Interposer Technology gives a comprehensive account of TSV technology for RF applications. The book gives a detailed demonstration of the design and process development of HR-Si interposer technology, including quality monitoring, and methods to extract S parameters, across nine chapters. A series of cases are presented, including for example an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature. This book will offer researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.