Infineon (IPT007N06NATMA1) Power MOSFET, N Channel, 60 V, 300 A, 660 µohm

Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount

Product Overview
The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Industry's lowest R DS(on)
Highest current capability up to 300A
Very low package parasitic and inductances
Less paralleling and cooling required
Highest system reliability
Enabling very compact design
100% Avalanche tested
Superior thermal resistance
Qualified according to JEDEC for target applications
Halogen-free, Green device

Applications
Power Management, Communications & Networking, Lighting, Automotive

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 300A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 660µohm
On Resistance Rds(on): 660µohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 2.8V
Power Dissipation Pd: 375W
Transistor Case Style: HSOF
Power Dissipation: 375W
No. of Pins: 8Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet