Infineon (IRF3205ZPBF) Power MOSFET, Automotive, N Channel, 55 V, 110 A

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole

Product Overview
The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology
Repetitive avalanche allowed up to Tjmax

Applications
Automotive, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 55V
Continuous Drain Current Id: 110A
Drain Source On State Resistance: 0.0065ohm
On Resistance Rds(on): 0.0065ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 170W
Power Dissipation: 170W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Power MOSFET