Infineon (IRF5210PBF) Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm

Infineon (IRF5210PBF) Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm

TO-220AB, Through Hole

R 470.00−27%

Takealot · checked 19 days ago

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Average
R 863.05
Lowest seen
R 470.00
Highest seen
R 1 062.00
Last change
-R 42.00
First indexed
28 Sep 2026
Retailer
Takealot

Description

Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole

Product Overview
The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.

Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Dynamic dv/dt Rating
Fully Avalanche Rated

Applications
Audio, Industrial

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Drain Source Voltage Vds: 100V
Continuous Drain Current Id: 40A
Drain Source On State Resistance: 0.06ohm
On Resistance Rds(on): 0.06ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 200W
Power Dissipation: 200W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet

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