Infineon (IRFR5305TRPBF) Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm

Infineon (IRFR5305TRPBF) Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm

TO-252AA, Surface Mount

R 196.00
5.0(1)

rated at Takealot · checked 14 days ago

View at Takealot
Average
R 308.62
Lowest seen
R 196.00
Highest seen
R 521.00
Last change
-R 25.00
First indexed
22 Sep 2026
Retailer
Takealot

Description

Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount

Product Overview
The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.

Ultra low on-resistance
Advanced process technology
Fully avalanche rated

Applications
Power Management

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 31A
Drain Source Voltage Vds: 55V
Drain Source On State Resistance: 0.065ohm
On Resistance Rds(on): 0.065ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 110W
Transistor Case Style: TO-252AA
Power Dissipation: 110W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Power MOSFET

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