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Infineon (IRF8010PBF) Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm

TO-220AB, Through Hole

R 304.00−29%

Takealot · checked 19 days ago

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Average: R 725.03
Lowest seen: R 304.00
Highest seen: R 885.00
Last change: -R 90.00
First indexed: 29 Sep 2026
Retailer: Takealot

Description

Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole

Product Overview
The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.

Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

Applications
Power Management, Motor Drive & Control

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 80A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.015ohm
On Resistance Rds(on): 0.015ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 260W
Transistor Case Style: TO-220AB
Power Dissipation: 260W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet