Infineon (IRFP9140NPBF) Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole

Product Overview
The IRFP9140NPBF is a -100V single P-channel HEXFET Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology
Dynamic dV/dt rating
Fully avalanche rated
175°C Operating temperature

Applications
Power Management

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 23A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.117ohm
On Resistance Rds(on): 0.117ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 120W
Transistor Case Style: TO-247AC
Power Dissipation: 120W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Power MOSFET